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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES * Dual MOS FET chips in small package * 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 m (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 m (MAX.) (VGS = 2.5 V, ID = 3.0 A) * Low Ciss : Ciss = 1100 pF (TYP.) * Built-in G-S protection diode * Small and surface mount package (Power SOP8) PACKAGE DRAWING (Unit : mm) 8 5 1 ; Source 1 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 4 ; Gate 2 5, 6 ; Drain 2 1 4 5.37 Max. +0.10 -0.05 6.0 0.3 4.4 0.8 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.8 Max. 1.44 0.05 Min. 0.5 0.2 0.10 1.27 0.40 0.78 Max. 0.12 M PA1758G +0.10 -0.05 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage (VGS = 0) Gate to Source Voltage (VDS = 0) Drain Current (DC) Drain Current (Pulse) Note1 Note2 Note2 EQUIVALENT CIRCUIT 30 12.0 6.0 24 1.7 2.0 150 -55 to + 150 V V A A W W C C Gate Body Diode Drain VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Total Power Dissipation (1 unit) Total Power Dissipation (2 unit) Channel Temperature Storage Temperature Gate Protection Diode Source Notes 1. PW 10 s, Duty cycle 1 % 2. Mounted on ceramic substrate of 2000 mm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2 The information in this document is subject to change without notice. Document No. D12911EJ1V0DS00 (1st edition) Date Published October 1998 NS CP(K) Printed in Japan (c) 1998 PA1758 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode forward Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) IF = 6.0 A, VGS = 0 ID = 6.0 A, VDD = 24 V, VGS = 4.0 V ID = 3.0 A, VGS(on) = 4.0 V, VDD = 15 V RG = 10 TEST CONDITIONS VGS = 4.5 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VDS = 10 V, ID = 1.0 mA VDS = 10 V, ID = 3.5 A VDS = 30 V, VGS = 0 VGS = 12.0 V, VDS = 0 VDS = 10 V, VGS = 0, f = 1 MHz 1100 370 170 50 190 550 490 15.0 2.0 6.5 0.8 0.5 5.0 MIN. TYP. 20 25 0.8 13 10 10 MAX. 30 40 1.5 UNIT m m V S A A pF pF pF ns ns ns ns nC nC nC V TEST CIRCUIT 1 SWITCHING TIME D.U.T. RL VGS VGS Wave Form TEST CIRCUIT 2 GATE CHARGE D.U.T. IG = 2 mA PG. 90 % 90 % ID PG. RG RG = 10 0 ID 10 % VGS (on) 90 % RL VDD VDD 50 VGS 0 t t = 1 s Duty Cycle 1 % ID Wave Form 0 10 % td (on) ton tr td (off) toff 10 % tf 2 PA1758 TYPICAL CHARACTERISTICS (TA = 25 C) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 rth(t) - Transient Thermal Resistance - C/W 100 10 1 0.1 0.01 0.001 Mounted on ceramic Single Pulse substrate of 2000mm2 x 1.1mm Single Pulse , 1 unit 10 100 1m 10 m 100 m 1 10 100 1 000 PW - Pulse Width - s RDS(on) - Drain to Source On-state Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 75 Pulsed |yfs| - Forward Transfer Admittance - S 100 TA=-50C TA=-25C TA=25C 10 VDS=10V Pulsed 50 ID=3 A TA=75C TA=125C TA=150C 1 25 0.1 1 10 100 0 2 4 6 8 10 12 14 ID- Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m VGS(off) - Gate to Source Cut-off Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulsed 70 60 50 40 30 20 10 0 1 VGS=4.5V VGS=2.5V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 - 50 0 50 100 150 VDS=10 V ID=1 mA 10 ID - Drain Current - A 100 Tch - Channel Temperature - C 3 PA1758 RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed IF - Diode Forward Current - A 40 VGS=2.5V 100 VGS=2.5V 10 30 20 VGS=4.5V 1 VGS=0V 10 ID= 3.0 A - 50 0 50 100 150 0.1 0 0.5 1.0 1.5 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz tf tr td(off) td(on) Ciss 1000 Coss 100 100 Crss 10 10 0.1 1 10 100 1 0.1 VDS=15V VGS=4V RG =10 1 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000 trr - Reverse Recovery Diode - ns VDS - Drain to Source Voltage - V VGS = 4 V 30 VDD=24 V VDD=15 V VDD=6 V VGS 6 100 20 4 10 10 2 1 0.1 1 10 100 0 4 8 12 0 16 ID - Drain Current - A QG - Gate Charge - nC 4 VGS - Gate to Source Voltage - V di/dt =100A/ s VGS = 0 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID=6.0 A 8 PA1758 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W/package 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 20 40 60 80 100 120 140 160 2 unit 1 unit Mounted on ceramic substrate of 2000mm2x1.1mm dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of 2 d ite ID(pulse) = 24 A 2000mm x1.1mm, 1 unit im V) Pw )L 5 on = S( 4. 1 RD GS= m Pw s 10 (V ID(DC)=6 A = 10 Pw m s = Po 10 we 0 m rD s iss ipa 1 tio n Lim ite d DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 25 ID - Drain Current - A ID - Drain Current - A 20 15 10 5 VGS=4.5 V VGS=2.5 V 0.1 0.1 TA = 25 C Single Pulse 1 10 100 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 100 Pulsed ID - Drain Current - A 10 TA=150C TA=125C 1 TA=75C TA=25C TA=-25C TA=-50C 0.1 0 1 2 3 4 VGS - Gate to Source Voltage - V 5 PA1758 [MEMO] 6 PA1758 [MEMO] 7 PA1758 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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